to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors m28s transistor (npn) features z high dc current gain and large current capability maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma ,i e =0 40 v collector-emitter breakdown voltage v (br) ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 6 v collector cut-off current i cbo v cb =40v,i e =0 1 a collector cut-off current i ceo v ce =20v,i b =0 5 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =1v, i c =1ma 290 h fe(2) v ce =1v, i c =100ma 300 1000 h fe(3) v ce =10v, i c =300ma 300 dc current gain h fe(4) v ce =1v, i c =500ma 300 collector-emitter saturation voltage v ce(sat) i c =600ma,i b =20ma 0.55 v transition frequency f t v ce =10v,i e =50ma ,f=30mhz 100 mhz classification of h fe(2) ran k b c d range 300-550 500-700 650-1000 symbo parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter sustaining voltage 20 v v ebo emitter-base voltage 6 v i c collector current 1 a p c collector power dissipation 0.625 w r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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